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DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D075
BLF246B VHF push-pull power MOS transistor
Product specification Supersedes data of 1999 Jan 28 2000 Feb 04
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability. APPLICATIONS Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange. PINNING - SOT161A PIN 1 2 3 4 5 6 7 8 DESCRIPTION source source drain 1 gate 1 drain 2 gate 2 source source WARNING Product and environmental safety - toxic materials Fig.1 Simplified outline and symbol.
1 Top view 3 5 7
MBC826
BLF246B
PIN CONFIGURATION
andbook, halfpage
2
4
6
8
d2 g2 g1 d1
MBB157
s
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a push-pull common source test circuit. MODE OF OPERATION CW, class-AB f (MHz) 175 VDS (V) 28 PL (W) 60 Gp (dB) >14 D (%) >55
2000 Feb 04
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS - - - -65 - MIN.
BLF246B
MAX.
UNIT
Per transistor section unless otherwise specified VDS VGS ID Ptot Tstg Tj drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature 65 20 8 130 +150 200 V V A W C C
total power dissipation Tmb 25 C total device; both sections equally loaded -
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base CONDITIONS total device; both sections equally loaded VALUE 1.35 0.25 UNIT K/W K/W
thermal resistance from mounting base total device; both sections equally to heatsink loaded
MRA932
MGR738
handbook, 50 halfpage
handbook, halfpage
160
ID (A) 10 (1) (2)
Ptot (W) 120
(2)
80
(1)
1 40
10-1 1 10 VDS (V)
102
0 0 40 80 120 Th (C) 160
(1) Current in this area may be limited by RDSon. (2) Tmb = 25 C. Total device; both sections equally loaded.
(1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
2000 Feb 04
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. - - - - 1.8 0.4 10 125 75 11
BLF246B
MAX. - 2 1 4.5 - 0.75 - - - -
UNIT
Per transistor section V(BR)DSS IDSS IGSS VGSth gfs RDSon IDSX Cis Cos Crs drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance VGS = 0; ID = 10 mA VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 10 mA; VDS = 10 V ID = 1.5 A; VDS = 10 V ID = 1.5 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz 65 - - 2 1.2 - - - - - V mA A V S A pF pF pF
handbook, halfpage
6 T.C. (mV/K) 4
MGR739
handbook, halfpage
12
MGR740
Tj = 25 C
ID (A) 8 125 C
2
0
-2 -4 -6 10
4
102
103
ID (mA)
104
0 0 10 VGS (V) 20
VDS = 10 V. VDS = 10 V.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current; typical values per section.
Fig.5
Drain current as a function of gate-source voltage; typical values per section.
2000 Feb 04
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
MGR741
handbook, halfpage
0.8
handbook, halfpage
240
MGR742
RDSon () 0.6
C (pF) 180
0.4
120
Cis
0.2
60
Cos
0 0 40 80 120 Tj (C) 160
0 0 10 20 30 VDS (V) 40
VGS = 10 V; ID = 1.5 A.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature; typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage; typical values per section.
handbook, halfpage
24
MGR743
Crs (pF) 18
12
6
0 0 10 20 30 VDS (V) 40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage; typical values per section.
2000 Feb 04
5
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
APPLICATION INFORMATION RF performance in CW operation in a push-pull, common source, class-B circuit. Th = 25 C; Rth mb-h = 0.25 K/W; unless otherwise specified. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 28 IDQ (mA) 2 x 50 PL (W) 60 Gp (dB) >14 typ. 19 Ruggedness in class-B operation The BLF246B is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 175 MHz at rated output power. D (%) >55 typ. 65
MGR744
MGR745
handbook, halfpage
25
100 Gp
Gp (dB)
D (%)
handbook, halfpage
100
PL (W)
20
80
80
15
60
60
D
10 40 40
5
20
20
0 0 20 40 60 PL (W) 80
0
0 0 0.5 1.0 1.5 2.0 2.5 PIN (W)
Class-B operation; VDS = 28 V; IDQ = 2 x 50 mA; ZL = 4.6 + j5 ; f = 175 MHz.
Class-B operation; VDS = 28 V; IDQ = 2 x 50 mA; ZL = 4.6 + j5 ; f = 175 MHz.
Fig.9
Power gain and efficiency as a function of load power; typical values per section.
Fig.10 Load power as a function of input power; typical values per section.
2000 Feb 04
6
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
handbook, full pagewidth
+VD R3 +VG C7 C13 C8 L12 C14 R1 C15 R7 R5 C11 C12
L13 L1 C1 L4 L6 L8 L10 L16 L18 L20 C25 L22
50 input
L2 C3 C2 L3 L5 L7 L9 L11 L17 L14 C16 R2 C10 C17 R8 L19 L21 C4 C5 C6 C21 C22 C23 C24 C26
L23
50 output
L24
L15 C18
C9 C19 C20 +VG R4 R6 +VD
MGR749
f = 175 MHz.
Fig.11 Test circuit for class-B operation.
2000 Feb 04
7
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
List of components class-B test circuit (see Figs 11 and 12) COMPONENT C3 C4 C5, C22, C24 C6 C7, C9, C12, C14, C17, C19 C8, C10, C15, C16 C11, C20 C13, C18 C21 C23 L1, L3, L22, L24 L2, L23 L4, L5 L6, L7 L8, L9 L10, L11 L12, L15 L13, L14 DESCRIPTION film dielectric trimmer film dielectric trimmer VALUE 4 to 40 pF 5 to 60 pF DIMENSIONS
BLF246B
CATALOGUE No. 2222 809 08002 2222 809 08003 2222 852 47104
C1, C2, C25, C26 multilayer ceramic chip capacitor; note 1 91 pF multilayer ceramic chip capacitor; note 1 180 pF multilayer ceramic chip capacitor; note 1 100 pF multilayer ceramic chip capacitor; note 1 100 nF multilayer ceramic chip capacitor; note 1 680 pF multilayer ceramic chip capacitor; note 1 10 nF electrolytic capacitor 10 F, 63 V multilayer ceramic chip capacitor; note 1 82 pF multilayer ceramic chip capacitor; note 1 33 pF stripline; note 2 semi-rigid cable stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 grade 3B Ferroxcube wideband HF choke 4 turns enamelled 1 mm copper wire 50 nH length 6.5 mm int. dia. 4 mm leads 2 x 5 mm 17 x 2.8 mm 26 x 2.8 mm 4 x 2.8 mm 55 50 50 50 50 50 111 x 2.5 mm length 111 mm ext. dia 2.2 mm 6.5 x 2.8 mm 35 x 2.8 mm 5 x 2.8 mm 9 x 2.8 mm 4312 020 36642 2222 852 47103
L16, L17 L18, L19 L20, L21 R1, R2, R7, R8 R3, R4 R5, R6 Notes
stripline; note 2 stripline; note 2 stripline; note 2 metal film resistor 10 turns potentiometer metal film resistor
50 50 50 0.4 W, 10 50 k 0.4 W, 205 k
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed-circuit board with epoxy glass dielectric (r = 4.5); thickness 1 inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on each side 16 of the board are connected together by means of copper straps and hollow rivets.
2000 Feb 04
8
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
handbook, full pagewidth
200
rivet
rivet
strap
strap
strap 110 strap rivet rivet
strap
strap
strap
strap
rivet
rivet
+VG
+VD L22
L1 + L2
L12 C11 C13 C14 C12 R7 C15 C7 C8 C1 C3 C2 L4 C4 L5 C5 R1 L6 L7 R2 C10 C9 C6 L10 L11 C16 R3 C17 L15 C19 L23 + L24 L8 L9 L13 C21 L16 L17 C22 L14 L20 C23 L18 L19 C24 L21 C25 C26
C20 C18
L3 +VG +VD
MGR750
Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Fig.12 Component layout for 175 MHz class-B test circuit.
2000 Feb 04
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
MGR746
MGR747
handbook, halfpage
10
handbook, halfpage
15
Zi () 5 ri
ZL () 10
RL
XL 0 xi 5
-5
0 0 100 200 300 f (MHz) 400 0 100 200 300 f (MHz) 400
Class-B operation; VDS = 28 V; IDQ = 2 x 50 mA; RGS = 10 ; PL = 60 W (total device).
Class-B operation; VDS = 28 V; IDQ = 2 x 50 mA; RGS = 10 ; PL = 60 W (total device).
Fig.13 Input impedance as a function of frequency (series components); typical values per section.
Fig.14 Load impedance as a function of frequency (series components); typical values per section.
MGR748
handbook, halfpage
25
Gp (dB)
20
handbook, halfpage
15
Zi
ZL
10
MBA379
5
0 0 100 200 300 f (MHz) 400
Class-B operation; VDS = 28 V; IDQ = 2 x 50 mA; RGS = 10 ; PL = 60 W (total device).
Fig.15 Definition of MOS impedance.
Fig.16 Power gain as a function of frequency; typical values per section.
2000 Feb 04
10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 8 leads
BLF246B
SOT161A
D
A F D1
U1 q H1 b C w2 M C M
B
c
2
4
6
8
H
U2
E1
E
A
1
3
5
7
b1
p w3 M
w1 M A M B M Q
e
e1
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.27 6.47 b 2.93 2.66 b1 2.04 1.77 c D D1 E E1 e e1 3.50 F H H1 p Q q U1 U2 w1 w2 0.51 w3 0.25
0.18 10.22 10.21 10.21 10.21 3.80 0.10 10.00 9.94 10.00 9.94
2.70 16.81 12.83 3.33 4.32 24.97 10.34 18.42 0.25 2.08 16.21 12.57 3.07 4.06 24.71 10.08
0.286 0.115 0.080 0.007 0.402 0.402 0.402 0.402 0.106 0.662 0.505 0.131 0.170 0.983 0.407 0.150 0.138 0.725 0.010 0.020 0.010 0.255 0.105 0.070 0.004 0.394 0.391 0.394 0.391 0.082 0.638 0.495 0.121 0.160 0.973 0.397
OUTLINE VERSION SOT161A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-03-29 99-10-04
2000 Feb 04
11
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF246B
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
2000 Feb 04
12
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
NOTES
BLF246B
2000 Feb 04
13
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
NOTES
BLF246B
2000 Feb 04
14
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
NOTES
BLF246B
2000 Feb 04
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 69
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603516/05/pp16
Date of release: 2000
Feb 04
Document order number:
9397 750 06765

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